Device with integrated power supply

ABSTRACT

Semiconductor devices and methods for forming a semiconductor device are disclosed. The semiconductor device includes a die. The die includes a die substrate having first and second major surfaces. The semiconductor device includes a power module disposed below the second major surface of the die substrate. The power module is electrically coupled to the die through through silicon via (TSV) contacts.

BACKGROUND

As technology evolves into era of sub-micron, there is a desire tointegrate different circuit elements into a single chip or integratedcircuit (IC). There is also a desire to integrate different chips bothvertically and horizontally in a single package to form a 2.5D or 3D ICpackage. Nevertheless, it is difficult to integrate these differenttypes of devices in a single chip or a single package. Particularly,some of these devices may have different power requirements. Sometimes,additional voltage regulators or charge pumps, etc. may be employed tocater for different circuits which require different power supplies.Hence, additional circuit and long power supply line are generally usedto provide power supply to the whole chip or package. These undesirablyconsume a lot of power and chip or package space and are not effectivein providing power to the different devices.

From the foregoing discussion, it is desirable to provide a device withhigh circuit performance which requires less power consumption and/orwith reduced chip or package size. It is also desirable to provide asmaller product which enhances portability. In addition, it is desirableto provide a process for forming a device which is fully compatible withthe process for forming 2.5D and 3D IC or package in the future.

SUMMARY

Embodiments generally relate to semiconductor devices. In oneembodiment, a semiconductor device is disclosed. The semiconductordevice includes a die. The die includes a die substrate having first andsecond major surfaces. The semiconductor device includes a power moduledisposed below the second major surface of the die substrate. The powermodule is electrically coupled to the die through through silicon via(TSV) contacts.

In another embodiment, a method for forming a semiconductor device ispresented. The method includes providing a die. The die includes a diesubstrate having first and second major surfaces. A power module isprovided below the second major surface of the die substrate. The powermodule is electrically coupled to the die through through silicon via(TSV) contacts.

In yet another embodiment, a method for forming a semiconductor deviceis presented. The method includes providing a wafer having first andsecond major surfaces. A power module is provided below the second majorsurface of the wafer. The power module is electrically coupled to thewafer through through silicon via (TSV) contacts.

These and other advantages and features of the embodiments hereindisclosed, will become apparent through reference to the followingdescription and the accompanying drawings. Furthermore, it is to beunderstood that the features of the various embodiments described hereinare not mutually exclusive and can exist in various combinations andpermutations.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the sameparts throughout the different views. Also, the drawings are notnecessarily to scale, emphasis instead generally being placed uponillustrating the principles of the invention. Various embodiments of theinvention are described with reference to the following drawings, inwhich:

FIGS. 1 a-c show various views of an embodiment of a semiconductordevice;

FIG. 2 show another embodiment of a semiconductor device;

FIGS. 3 a-c show other embodiments of a semiconductor device; and

FIGS. 4-5 show flow charts of various embodiments of a process forforming a semiconductor device.

DETAILED DESCRIPTION

Embodiments relate to semiconductor devices or integrated circuits(ICs). The semiconductor devices may include one or more dies. For thecase of more than one die, the dies may be arranged in a planararrangement, vertical arrangement, or a combination thereof. The die,for example, may include memory device, logic device, communicationdevice, optoelectronic device, digital signal processor (DSP),microcontroller, system-on-chip (SOC) as well as other types of deviceor a combination thereof. Such semiconductor device may be incorporatedinto electronic products or equipments, such as phones, computers,mobile smart products, etc.

FIG. 1 a shows a simplified side view of an embodiment of asemiconductor device 100 while FIG. 1 b shows a cross-sectional view ofthe semiconductor device. Referring to FIGS. 1 a-b, the semiconductordevice is a device package with a die 110. The die may be a singulateddie. For example, a wafer is processed to have a plurality of dies. Theprocessed wafer is diced to singulate the dies.

The die includes a die substrate 115. The die substrate may be asemiconductor substrate. For example, the die substrate may be a siliconsubstrate. Other types of semiconductor substrates may also be useful.For example, the die substrate may be a silicon-on-insulator, silicongermanium or other types of semiconductor substrates. The die substrateincludes first and second major substrate surfaces 116 a-b. The firstmajor substrate surface 116 a, for example, may be referred to as thefront or active substrate surface and the second major surface 116 b,for example, may be referred to as the back or inactive substratesurface. Other designations for the surfaces may also be useful.

The inactive substrate surface may serve as a bottom die surface 110 b.The bottom die surface may be lined with a dielectric layer 170. Theactive surface is the surface of the substrate on which circuitcomponents 140 are formed. The components, for example, includetransistors having gate and source/drain (s/d) regions. Providing othertypes of circuit components may also be useful. For example, thesubstrate may include a combination of active and passive components.

The components may be interconnected by interconnects 164 disposed onone or more metal levels 160. The metal levels, for example, aredisposed over a dielectric layer 130 on the first surface of thesubstrate. The dielectric layer serves as a pre-metal dielectric (PMD)layer. The PMD layer, for example, may be silicon oxide. Other types ofdielectric materials may also serve as the PMD layer. Typically,contacts are used to connect front end devices, such as source/drain andgate of the transistor, to the interconnect metal layer. The contacts,for example, are tungsten contacts. Other types of conductive materialscan serve as contacts. A first metal level (e.g., MO) is disposed on thePMD layer. The first metal level includes interconnects 164 formed in anintra-metal dielectric (IMD) layer. The interconnects, for example, arecopper or copper alloy interconnects. Other types of conductivematerials, such as Aluminum (Al), etc., may be used to form theinterconnects.

Additional metal levels may be disposed over the first metal level. Ametal level is formed in an interconnect dielectric (ICD) layer. An ICDlayer, for example, includes lower and upper portions. The lower portionserves as an inter-level dielectric (ILD) layer while the upper portionserves as an intra-metal IMD layer. The IMD layer includes interconnects164 of metal level Mx and the ILD includes via contact 162 of via levelVx, where x correponds to a number of the metal level. For example, x isfrom 1 to the top metal level. Via contacts of via level Vx couplesinterconnects of Mx to interconnects of metal level Mx−1 below. Otherconfigurations or designations of levels or layers may also be useful.

The ILD layer can be a single layer or a multi-layered dielectric stack.For example, a single layer can be used to serve as both the ILD and IMDor separate layers are used for the ILD and IMD. An etch stop layer maybe provided between the ILD and IMD layers as well as between ICDlayers. For multi-layered ICD, the ILD and IMD can include the same ordifferent materials.

The dielectric material of the ICD may include a low-k (LK) or ultralow-k (ULK) dielectric material. Various types of low-k or ultra low-kmaterials, such as organo-silicate glass (OSG), fluorine-doped silicateglass (FSG) or SiCOH can be employed. Other types of dielectricmaterials are also useful. For example, the dielectric layer can includesilicon oxide, doped silicon oxide such as fluorinated silicon oxide(FSG), undoped or doped silicate glasses such as boron phosphatesilicate glass (BPSG) and phosphate silicate glass (PSG), undoped ordoped thermally grown silicon oxide, undoped or doped TEOS depositedsilicon oxide.

A top die surface 110 a may include die contact pads which are coupledto the interconnects in the metal levels. In one embodiment, the contactpads may include ball bumps, forming a flip chip.

A power module 120 is integrated into the device package. The powermodule includes a power source 122. The power source, in one embodiment,is a battery cell. The battery cell, for example, is a lithium batterycell. In another embodiment, the power source is a solar cell. Othertypes of power sources, such as Nickel Metal Hydride (NIMH) battery, mayalso be useful. The power source may provide a voltage to operate the ICor die. The power module may also provide multiple voltages foroperating the IC. For example, multiple power sources may be employed toprovide multiple voltages. The multiple power sources may be connectedto provide multiple voltages, depending on the requirements andapplication of the device. The power sources may be connected in seriesto achieve a higher voltage, or connected in parallel to increase thepower current. Other lead configurations of power sources, such as acombination of parallel and series connected sources, may also beuseful.

The power module includes at least first and second terminals 126 and128. For example, the power module includes first and second terminals.One of the terminals is a positive terminal and the other is a negativeterminal. In the case where multiple (n) voltages are provided by thepower module, it includes n+1 terminals. For example, n positiveterminals and 1 negative terminal are provided. The power module, in oneembodiment, is disposed on the second surface of the die. For example,the power module is disposed on and contacts the second surface of thedie. In one embodiment, the power source is disposed on the inactivesurface of the die. As shown, leads of the terminals are disposed onopposing surfaces of the power source. Other configurations, such asproviding leads on one surface of the power source, may also be useful.

The die, in one embodiment, includes through silicon via (TSV) contacts150. The TSV contacts are formed in through silicon vias (TSVs).

The TSV contacts may be extended to the top die surface byinterconnections through, for example, the ICD layers or metal levels.In other embodiments, the TSV contacts may extend through the diesurfaces. Other configurations of TSV contacts may also be useful. Aredistribution layer (RDL) may be disposed on the top die surface. TheRDL includes conductive traces which couple the TSV contacts to the diecontact pads. An insulating liner 157 may be provided to line thesidewalls of the TSVs.

The TSVs are coupled directly to the terminals of the power moduledisposed on the backside of the die. Providing any suitable number ofTSV contacts may be useful. The TSV contacts are coupled to the die padsby, for example, the RDL layer. This enables the power module to supplyvoltage or voltages directly to the die or other dies.

FIG. 1 c shows a simplified layout of an embodiment of a die 110. Asshown, the die is a SOC chip. The SOC chip includes a plurality offunctional modules formed on the die substrate. For example, the SOCchip may include a plurality memory modules, such as SRAM and flashEPROM modules 130 a-b, a logic module 131, an I/O bus module 132, aprocessor module 133, a microcontroller module 134, a charge pump module135, an anolog-to-digital converter module 136 a and a digital-to-analogconvertor module 136 b. The SOC chip may include other types of modules.These modules are interconnected and powered directly by the batterydisposed on the backside of the chip or die, forming a system on thedie. Other types of chip designs may also use a similar design concept.

FIG. 2 illustrates another embodiment of a semiconductor device 200. Thesemiconductor device is similar to that described in FIGS. 1 a-b. Assuch, common elements may not be described or described in detail. Thesemiconductor device 200, in one embodiment, includes a die stack. Thedie stack includes x number of dies, where x is ≧2. For example, the diestack includes dies 110 _(1−x). Illustratively, the die stack includestwo dies, a bottom die 110 ₁ and a top die 110 ₂. Providing a die stackwith other number of dies may also be useful. For die stacks with morethan 2 dies, intermediate dies 110 _(2-(x−1)) are disposed between thetop and bottom dies. The dies of the die stack can be of the same typeand/or size. Providing a die stack having chips which are differenttypes and/or sizes is also useful.

The dies, for example, includes TSV contacts 150 and for coupling toterminals of the power module 120. The power module is disposed on thebottom die surface 110 b ₁ of the bottom die. An RDL layer may bedisposed on the top die surface for coupling the via contacts to the diepads. Additionally, the RDL of a die provides connections to TSVcontacts of a die above. For example, the RDL of the i^(th) die providesconnections to the TSV contacts of the i^(th)+1 die. It is understoodthat not all dies need to have the same configurations. For example, thebottom die includes TSV contacts for connecting to the power source, theother dies include TSV contacts and RDLs for connecting an i^(th) die todie pads of i^(th)+1 die, and the RDL of the top pad connects the powersource to the top die pads.

FIGS. 3 a-c illustrate other embodiments of a semiconductor device 300.Referring to FIG. 3 a, the semiconductor device 300 includes a powermodule 120 integrated into a die 110. In one embodiment, the powermodule includes a power source 122 and an interposer 380. The interposerserves as a support member on which the power source is disposed. Theinterposer may be formed of, for example, silicon. Other suitable typesof materials may also be used in forming the interposer.

The interposer includes first and second interposer surfaces 380 a-b. Adielectric layer (not shown) may line the major surfaces of theinterposer. As shown, the power source is disposed on the secondinterposer surface while the die is disposed on the first interposersurface. In one embodiment, the interposer includes interposer contactsformed in through silicon vias formed through its surfaces. Theinterposer contacts, for example, are similar to the TSV contactsdescribed in FIGS. 1 a-b. The interposer contacts enable connections tothe terminals of the power source disposed on the second interposersurface by the die disposed on the first interposer surface.

The die, for example, may include TSV contacts which provide connectionson its bottom surface 110 b to die pads on the top die surface 110 a. AnRDL may be disposed on the first major surface, providing connectionsbetween the interposer contacts to the TSV contacts of the die.

As shown, a single die is provided on the first major surface. It isunderstood that a die stack, as described in FIG. 2, may be provided onthe first interposer surface. For example, the dies of the die stack maybe coupled to the interposer contacts by TSV contacts. In otherembodiments, the dies may be coupled by TSV contacts while the top dieof the die stack is coupled to the interposer contacts by interconnectmetal layers and bump connections.

In an alternative embodiment, as shown in FIG. 3 b, a plurality of diesare disposed on the first interposer surface. For example, m number ofdies may be disposed in a non-stacked configuration. Illustratively,three dies 110 ₁₋₃ (e.g., m=3) are disposed on the first interposersurface. The dies, in one embodiment, include TSV type of dies. The diesmay be coupled to the power source by TSV contacts. In otherembodiments, the dies may include non-TSV type of dies, as shown in FIG.3 c. In such embodiments, the dies are coupled to the interposercontacts by bump connections 370. Other configurations of dies may alsobe useful. In some embodiments, the device may include die stacks, asdescribed in FIGS. 2 and 3 a, disposed on the first interposer surface.Also, providing a combination of die stacks and dies on the firstinterposer surface may also be useful.

As described, die or a set of dies are integrated with its own powermodule. Providing an integrated power module advantageously avoids theuse of long power supply lines to provide power to the die or dies.Furthermore, such arrangement further reduces interconnect bus lengthand/or eliminate the use of some voltage regulator circuits. Therefore,the power consumption may be greatly reduced. In addition, thearrangement as described also enables more compact device to be formed.This allows for smaller product which incorporates the device to beproduced, thus enhances portability.

FIG. 4 shows a flow chart illustrating an embodiment of a process forforming a semiconductor device 400. The process includes providing awafer, such as a large scale integration (LSI) wafer, being processed atstep 410. The wafer, in one embodiment, includes a TSV type of diesimilar or the same as that described with respect to FIGS. 1 a-c above.As such, common elements may not be described or described in detail.For example, the wafer is prepared with through silicon vias (TSVs) .The wafer includes a wafer substrate having first (active) and second(inactive) major surfaces. The die, for example, includes a circuitcomponent or a plurality of circuit components formed on the first oractive surface of the die substrate. In one embodiment, the die includesa plurality of through silicon via (TSV) contacts formed in throughsilicon vias (TSVs) within the die substrate. The TSVs, for example, maybe formed by deep reactive ion etching (DRIE) or laser drilling process.Other suitable techniques may also be used to form the TSVs. Insulationliners, for example, may be formed to line the sidewalls of the TSVs.The TSVs, in one embodiment, are filled by conductive material, such ascopper (Cu), by electroplating process and are planarized using chemicalmechanical polishing (CMP) to form the TSV contacts. Other suitabletechniques and materials may also be used to form the TSV contacts.

The process continues by thinning the second surface or inactive surfaceof the wafer to reduce the thickness of the wafer. The second surface ofthe wafer, for example, is thinned by processes such as grinding, CMP,RIE, etc., or a combination thereof. The backgrinding process, forexample, exposes the bottom of the TSV contacts at step 412.

At step 414, a power module is provided on the second major surface ofthe wafer. The power module includes a power source similar to thatdescribed with respect to FIGS. 1 a-b. As described, the power source,in one embodiment, is a battery cell. The battery cell, for example, isa lithium battery cell. In another embodiment, the power source is asolar cell. Other types of power sources, such as NiMH battery may alsobe useful. In one embodiment, the power module is integrally formed orbuilt on the second major surface of the wafer. In other embodiments,the power module may be separately formed and attached to the secondmajor surface of the wafer. The process includes electrically couplingthe power module and the circuit components on the first or activesurface of the wafer through the TSV contacts at step 414.

The process may include further or additional processing steps tocomplete the fabrication of the semiconductor device. For example, thewafer can be diced or singulated to separate the wafer into individualdies with integrated power module and further processed to form a devicepackage as shown in Fig. la-b at step 416. The process, in otherembodiments, may further include mounting additional die or dies on topof the singulated die to form a die stack with integrated power moduleas shown in FIG. 2.

As described, the power module is integrated into the device of package.The circuit components on the active surface of the die areinterconnected and powered directly with the battery cell disposed atthe backside of the die through the TSV contacts. This advantageouslyavoids the use of long power supply lines to provide power to the die ordies. Moreover, such arrangement further reduces interconnect bus lengthand/or eliminate the use of some voltage regulator circuits. Therefore,the power consumption may be greatly reduced. In addition, thearrangement as described also enables more compact device to be formed.This allows for smaller product which incorporates the device to beproduced, thus enhances portability. The embodiment as described withrespect to FIG. 4 is a fully compatible process with the process offorming 3D ICs or package in the future.

FIG. 5 shows a flow chart illustrating another embodiment of a processfor forming a semiconductor device 500. The process includes providing awafer having first and second major surfaces. The wafer, in oneembodiment, serves as an interposer wafer at step 510. The interposerwafer, in one embodiment, includes a silicon wafer having a plurality ofinterposer contacts. The interposer contacts, for example, are similarto the TSV contacts as described in FIG. 4. The interposer contacts, forexample, may be formed by similar process as described for the TSVcontacts of FIG. 4. As such, common elements may not be described ordescribed in detail.

The second or bottom surface of the interposer wafer is thinned toreduce the thickness of the wafer. The second surface of the interposerwafer, for example, is thinned by processes such as grinding, CMP, RIE,etc., or a combination thereof. The backgrinding process, for example,exposes the bottom of the interposer contacts at step 512.

At step 514, a power module is provided on the second major surface ofthe interposer wafer. The power module includes a power source similarto that described with respect to FIGS. 1 a-b. As described, the powersource, in one embodiment, is a battery cell. The battery cell, forexample, is a lithium battery cell. In another embodiment, the powersource is a solar cell. Other types of power sources, such as NiMHbattery may also be useful. In one embodiment, the power module isintegrally formed or built on the second major surface of the interposerwafer. In other embodiments, the power module may be separately formedand attached to the second major surface of the interposer wafer.

The process also includes providing a die or a plurality of dies at step514 on the first surface of the interposer wafer. In one embodiment, thedie may include TSV type of die similar or the same as that describedwith respect to FIGS. 1 a-c above. In other embodiments, the die mayinclude non-TSV type of die. The die or the plurality of dies having TSVcontacts are mounted on the first major surface of the interposer wafer.The process includes electrically coupling the power module and the dieor dies through the interposer contacts of the interposer wafer at step514.

The process may include further or additional processing steps tocomplete the fabrication of the semiconductor device. For example, theinterposer wafer can be diced or singulated to separate the wafer andfurther processed to form the individual device package with integratedpower module as shown in FIG. 3 a-c at step 516. The process, in otherembodiments, may also include mounting additional die or dies on top ofthe device package to form a die stack device package with integratedpower module.

The embodiment as described with respect to FIG. 5 includes some or alladvantages as described with respect to FIG. 4. As such, theseadvantages will not be described or described in detail.

The invention may be embodied in other specific forms without departingfrom the spirit or essential characteristics thereof. The foregoingembodiments, therefore, are to be considered in all respectsillustrative rather than limiting the invention described herein. Scopeof the invention is thus indicated by the appended claims, rather thanby the foregoing description, and all changes that come within themeaning and range of equivalency of the claims are intended to beembraced therein.

What is claimed is:
 1. A semiconductor device comprising: a die whichincludes a die substrate having first and second major surfaces; and apower module disposed below the second major surface of the diesubstrate, wherein the power module is electrically coupled to the diethrough through silicon via (TSV) contacts.
 2. The semiconductor deviceof claim 1 wherein the TSV contacts are disposed within the diesubstrate.
 3. The semiconductor device of claim 2 wherein the firstmajor surface is an active substrate surface while the second majorsurface is an inactive substrate surface.
 4. The semiconductor device ofclaim 3 wherein circuit components are disposed on the first majorsurface.
 5. The semiconductor device of claim 2 wherein: the powermodule includes at least first and second terminals; and the TSVcontacts are coupled to the first and second terminals.
 6. Thesemiconductor device of claim 5 wherein one of the at least first andsecond terminals directly contacts the second major surface of the diesubstrate.
 7. The semiconductor device of claim 5 wherein the powermodule includes lithium battery cell, solar cell or Nickel-Metal Hydride(NiMH) battery.
 7. The semiconductor device of claim 1 further comprisesan interposer having first and second surfaces disposed in between thedie and the power module.
 8. The semiconductor device of claim 7 whereinthe TSV contacts are disposed within the interposer.
 9. Thesemiconductor device of claim 7 wherein the die is disposed on the firstinterposer surface while the power module is disposed on the secondinterposer surface.
 10. The semiconductor device of claim 9 wherein thedie is coupled to the interposer by TSV contacts within the diesubstrate or bump connections on the first interposer surface.
 11. Amethod for forming a semiconductor device comprising: providing a diewhich includes a die substrate having first and second major surfaces;and providing a power module below the second major surface of the diesubstrate, wherein the power module is electrically coupled to the diethrough through silicon via (TSV) contacts.
 12. The method of claim 11comprises forming the TSV contacts within the die substrate.
 13. Themethod of claim 11 comprises providing an interposer in between the dieand the power module.
 14. The method of claim 13 comprises forming theTSV contacts within the interposer.
 15. A method for forming asemiconductor device comprising: providing a wafer having first andsecond major surfaces; and providing a power module below the secondmajor surface of the wafer, wherein the power module is electricallycoupled to the wafer through through silicon via (TSV) contacts.
 16. Themethod of claim 15 wherein the wafer is processed with a plurality ofdies having circuit components on the first major surface of the wafer.17. The method of claim 16 comprises: forming TSV contacts within thewafer; and thinning the second major surface of the wafer to exposebottom surfaces of the TSV contacts.
 18. The method of claim 17 whereinproviding the power module comprises integrally forming the power moduleon the second major surface of the wafer.
 19. The method of claim 15wherein: the wafer serves as an interposer wafer, and comprises formingthe TSV contacts within the interposer wafer.
 20. The method of claim 19further comprises providing a die or dies on the first major surface ofthe interposer wafer.